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Fast Switching Low On-Resistance Low Gate Charge Low Reverse transfer capacitances High avalanche ruggedness RoHS product
Fast Switching
Low On-Resistance ( RDS(on)≤12mΩ )
Low Gate Charge
Low Reverse transfer capacitances
High avalanche ruggedness
RoHS product
BLP12N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifier and high speed switching applications.
