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上海贝岭公司的Trench MOSFET器件提供低导通、快速、ESD保护、Rg集成等全系列完整产品线。通过优化的结构设计、先进的制造工艺和可靠的封装，实现了功率密度最大化以及优秀的FOM（品质因子（Qg*Rdson））值，保证了行业内的领先水平。
| Part No. | Type | Mode | VDS(Max.) | ID(Max.) | RDS(on)(Max.) | Qg(Typ) | Package | Reference | Application |
|---|---|---|---|---|---|---|---|---|---|
| BLM04N06 | Trench MOSFETs | N-Channel | 60V | 150A | 4.2mΩ | 186nC | TO220, TO263 | ||
| BLM04N08 | Trench MOSFETs | N-Channel | 80V | 200A | 4mΩ | 257nC | TO220, TO263 | ||
| BLM06N10 | Trench MOSFETs | N-Channel | 100V | 140A | 6mΩ | 108nC | TO220, TO263 | ||
| BLM07N06 | Trench MOSFETs | N-Channel | 60V | 95A | 7mΩ | 80nC | TO220 TO252 TO263 | ||
| BLM08N06 | Trench MOSFETs | N-Channel | 60V | 80A | 8mΩ | 90nC | TO220, TO252, SOP8 | ||
| BLM08N06L | Trench MOSFETs | N-Channel | 60V | 80A | 8mΩ | 90nC | TO220, TO252, SOP8 | ||
| BLM08N10 | Trench MOSFETs | N-Channel | 100V | 110A | 8mΩ | 162nC | TO220, TO263 | ||
| BLM08N68 | Trench MOSFETs | N-Channel | 68V | 90A | 8mΩ | 40nC | TO220, TO252 | ||
| BLM08P02 | Trench MOSFETs | P-Channel | -20V | -40A | 8mΩ | 45nC | PDFN3.3×3.3, SOP8 | ||
| BLM10P03 | Trench MOSFETs | P-Channel | -30V | -24A | 10mΩ | 36nC | TO252, PDFN3.3×3.3, SOP8, PDFN5×6 |
